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Vertical transistor and method of forming the vertical transistor |
Fee Li Lie, Shogo Mochizuki |
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| 11521927 |
Buried power rail for scaled vertical transport field effect transistor |
Ruilong Xie, Choonghyun Lee, Alexander Reznicek |
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| 11489111 |
Reversible resistive memory logic gate device |
Hsueh-Chung Chen, Su Chen Fan |
2022-11-01 |
| 11456354 |
Bulk nanosheet with dielectric isolation |
Kangguo Cheng, Bruce B. Doris |
2022-09-27 |
| 11456219 |
Gate-all-around FETs having uniform threshold voltage |
Ruqiang Bao, Dechao Guo, Heng Wu |
2022-09-27 |
| 11380842 |
Phase change memory cell with second conductive layer |
Juntao Li, Kangguo Cheng, Ruilong Xie |
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| 11355401 |
Field effect transistor |
Effendi Leobandung, Veeraraghavan S. Basker, Albert M. Chu |
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| 11348999 |
Nanosheet semiconductor devices with sigma shaped inner spacer |
Alexander Reznicek, Chun-Chen Yeh, Veeraraghavan S. Basker |
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| 11289573 |
Contact resistance reduction in nanosheet device structure |
Heng Wu, Dechao Guo, Ruqiang Bao, Lan Yu, Reinaldo Vega +1 more |
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| 11282838 |
Stacked gate structures |
Chen Zhang, Dechao Guo, Ruilong Xie, Kangguo Cheng, Juntao Li +5 more |
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| 11276576 |
Gate metal patterning to avoid gate stack attack due to excessive wet etching |
Alexander Reznicek, Shogo Mochizuki, Joshua M. Rubin |
2022-03-15 |
| 11251179 |
Long channel and short channel vertical FET co-integration for vertical FET VTFET |
Terence B. Hook, Baozhen Li, Kirk D. Peterson |
2022-02-15 |
| 11251304 |
Wrap-around bottom contact for bottom source/drain |
Alexander Reznicek, Ruilong Xie, Bruce B. Doris |
2022-02-15 |
| 11239343 |
Vertical transistor including symmetrical source/drain extension junctions |
Chun-Chen Yeh, Alexander Reznicek, Veeraraghavan S. Basker |
2022-02-01 |
| 11239360 |
Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy |
Shogo Mochizuki, Brent A. Anderson, Hemanth Jagannathan |
2022-02-01 |
| 11239115 |
Partial self-aligned contact for MOL |
Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek |
2022-02-01 |
