Issued Patents 2022
Showing 25 most recent of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527616 | Vertical transport CMOS transistors with asymmetric threshold voltage | Takashi Ando, Jingyun Zhang, Alexander Reznicek | 2022-12-13 |
| 11527574 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2022-12-13 |
| 11521927 | Buried power rail for scaled vertical transport field effect transistor | Ruilong Xie, Junli Wang, Alexander Reznicek | 2022-12-06 |
| 11515214 | Threshold voltage adjustment by inner spacer material selection | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2022-11-29 |
| 11515217 | Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate | Takashi Ando, Pouya Hashemi, Jingyun Zhang | 2022-11-29 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Juntao Li, Kangguo Cheng, Shogo Mochizuki | 2022-10-18 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Alexander Reznicek, Jingyun Zhang, Pouya Hashemi | 2022-09-13 |
| 11430660 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2022-08-30 |
| 11430514 | Setting an upper bound on RRAM resistance | Youngseok Kim, Soon-Cheon Seo, Injo Ok, Alexander Reznicek | 2022-08-30 |
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2022-08-23 |
| 11404581 | Wimpy vertical transport field effect transistor with dipole liners | Alexander Reznicek, Xin Miao, Jingyun Zhang | 2022-08-02 |
| 11387342 | Multi threshold voltage for nanosheet | Jingyun Zhang, Takashi Ando, Alexander Reznicek | 2022-07-12 |
| 11380778 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2022-07-05 |
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Juntao Li, Heng Wu, Peng Xu | 2022-06-14 |
| 11362031 | Integrated circuit device and method of manufacturing the same | Joonyong Choe, Youngju Lee | 2022-06-14 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2022-06-07 |
| 11355553 | Resistive random access memory integrated under a vertical field effect transistor | Alexander Reznicek, Bahman Hekmatshoartabari, Tak H. Ning | 2022-06-07 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Juntao Li, Heng Wu, Peng Xu | 2022-05-24 |
| 11329143 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Juntao Li, Peng Xu | 2022-05-10 |
| 11322588 | Contact source/drain resistance | Fee Li Lie, Kangguo Cheng, Hemanth Jagannathan, Oleg Gluschenkov | 2022-05-03 |
| 11322408 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Nicolas Loubet, Richard A. Conti | 2022-05-03 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Juntao Li | 2022-04-26 |