Issued Patents 2022
Showing 1–25 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538939 | Controlled bottom junctions | Brent A. Anderson, Juntao Li, Kangguo Cheng | 2022-12-27 |
| 11527446 | Transistor having strain-inducing anchors and a strain-enhancing suspended channel | Kangguo Cheng, Juntao Li, Julien Frougier | 2022-12-13 |
| 11527535 | Variable sheet forkFET device | Julien Frougier, Kangguo Cheng, Chanro Park | 2022-12-13 |
| 11521927 | Buried power rail for scaled vertical transport field effect transistor | Junli Wang, Choonghyun Lee, Alexander Reznicek | 2022-12-06 |
| 11521894 | Partial wrap around top contact | Julien Frougier, Ekmini Anuja De Silva, Eric Miller | 2022-12-06 |
| 11508823 | Low capacitance low RC wrap-around-contact | Ekmini Anuja De Silva, Jing Guo, Hao Tang, Cheng Chi | 2022-11-22 |
| 11502169 | Nanosheet semiconductor devices with n/p boundary structure | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2022-11-15 |
| 11500614 | Stacked FET multiply and accumulate integrated circuit | Bahman Hekmatshoartabari, Alexander Reznicek, Jingyun Zhang | 2022-11-15 |
| 11502202 | Transistors with uniform source/drain epitaxy | Kangguo Cheng, Chun-Chen Yeh, Tenko Yamashita | 2022-11-15 |
| 11495538 | Fully aligned via for interconnect | Christopher J. Waskiewicz, Chih-Chao Yang, Lawrence A. Clevenger, Ashim Dutta | 2022-11-08 |
| 11489009 | Integrating embedded memory on CMOS logic using thin film transistors | Heng Wu, Julien Frougier, Bruce B. Doris, Chen Zhang | 2022-11-01 |
| 11489045 | Nanosheet transistor with body contact | Alexander Reznicek, Bahman Hekmatshoartabari, Tak H. Ning | 2022-11-01 |
| 11482617 | Vertical transport field-effect transistor including replacement gate | Chen Zhang, Kangguo Cheng, Julien Frougier | 2022-10-25 |
| 11476163 | Confined gate recessing for vertical transport field effect transistors | Chanro Park, Sung-Dae Suk, Heng Wu | 2022-10-18 |
| 11476346 | Vertical transistor having an oxygen-blocking top spacer | Chen Zhang, Christopher J. Waskiewicz, Shahab Siddiqui | 2022-10-18 |
| 11469309 | Gate contact structures and cross-coupled contact structures for transistor devices | Youngtag Woo, Daniel Chanemougame, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2022-10-11 |
| 11469146 | Methods of performing fin cut etch processes for FinFET semiconductor devices | Lei Zhuang, Balasubramanian Pranatharthiharan, Lars Liebmann, Terence B. Hook | 2022-10-11 |
| 11456181 | Cross-bar fin formation | Kangguo Cheng, Chanro Park, Juntao Li | 2022-09-27 |
| 11450678 | Split gate (SG) memory device and novel methods of making the SG-memory device | Hui Zang, Shesh Mani Pandey | 2022-09-20 |
| 11450659 | On-chip decoupling capacitor | Alexander Reznicek, Jingyun Zhang, Lan Yu | 2022-09-20 |
| 11450570 | Single diffusion cut for gate structures | Hui Zang | 2022-09-20 |
| 11444238 | Scalable heat sink and magnetic shielding for high density MRAM arrays | Julien Frougier, Heng Wu, Chen Zhang, Bruce B. Doris | 2022-09-13 |
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Andrew M. Greene, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2022-09-13 |
| 11437489 | Techniques for forming replacement metal gate for VFET | Heng Wu, Chanro Park, Kangguo Cheng | 2022-09-06 |
| 11437286 | Middle of line structures | Hui Zang | 2022-09-06 |