Issued Patents 2022
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Andrew M. Greene, Ruilong Xie, Laertis Economikos, Chanro Park, Hui Zang | 2022-09-13 |
| 11404560 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2022-08-02 |
| 11387319 | Nanosheet transistor device with bottom isolation | Ruilong Xie, Andrew M. Greene, Pietro Montanini | 2022-07-12 |
| 11380589 | Selective removal of semiconductor fins | Kangguo Cheng, Ali Khakifirooz | 2022-07-05 |
| 11355401 | Field effect transistor | Effendi Leobandung, Junli Wang, Albert M. Chu | 2022-06-07 |
| 11349029 | Structure to enable titanium contact liner on pFET source/drain regions | Keith E. Fogel, Nicole S. Munro, Alexander Reznicek | 2022-05-31 |
| 11348999 | Nanosheet semiconductor devices with sigma shaped inner spacer | Alexander Reznicek, Chun-Chen Yeh, Junli Wang | 2022-05-31 |
| 11349001 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Kangguo Cheng, Juntao Li | 2022-05-31 |
| 11239343 | Vertical transistor including symmetrical source/drain extension junctions | Chun-Chen Yeh, Alexander Reznicek, Junli Wang | 2022-02-01 |
| 11239115 | Partial self-aligned contact for MOL | Ruilong Xie, Alexander Reznicek, Junli Wang | 2022-02-01 |
| 11227923 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Andrew M. Greene, Alexander Reznicek, Yao Yao | 2022-01-18 |