Issued Patents 2022
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538939 | Controlled bottom junctions | Brent A. Anderson, Ruilong Xie, Kangguo Cheng | 2022-12-27 |
| 11527446 | Transistor having strain-inducing anchors and a strain-enhancing suspended channel | Kangguo Cheng, Julien Frougier, Ruilong Xie | 2022-12-13 |
| 11495688 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2022-11-08 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-10-18 |
| 11453911 | DNA sequencing with stacked nanopores | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2022-09-27 |
| 11456181 | Cross-bar fin formation | Kangguo Cheng, Chanro Park, Ruilong Xie | 2022-09-27 |
| 11444083 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Kangguo Cheng, Peng Xu | 2022-09-13 |
| 11430879 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2022-08-30 |
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-08-23 |
| 11398347 | Inductor with ferromagnetic cores | Kangguo Cheng, Geng Wang, Qintao Zhang | 2022-07-26 |
| 11380778 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-07-05 |
| 11380842 | Phase change memory cell with second conductive layer | Kangguo Cheng, Ruilong Xie, Junli Wang | 2022-07-05 |
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2022-06-14 |
| 11355588 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Peng Xu | 2022-06-07 |
| 11355644 | Vertical field effect transistors with self aligned contacts | Yi Song, Kangguo Cheng | 2022-06-07 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2022-06-07 |
| 11349001 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker | 2022-05-31 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2022-05-24 |
| 11335773 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2022-05-17 |
| 11329143 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2022-05-10 |
| 11322402 | Self-aligned top via scheme | Ruilong Xie, Chih-Chao Yang, Carl Radens, Kangguo Cheng | 2022-05-03 |
| 11315799 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chanro Park, Chih-Chao Yang, Kangguo Cheng | 2022-04-26 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2022-04-26 |
| 11302799 | Method and structure for forming a vertical field-effect transistor | Peng Xu, Choonghyun Lee, Kangguo Cheng | 2022-04-12 |