Issued Patents 2022
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515401 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2022-11-29 |
| 11502169 | Nanosheet semiconductor devices with n/p boundary structure | Ruilong Xie, Jingyun Zhang, Alexander Reznicek | 2022-11-15 |
| 11495673 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2022-11-08 |
| 11453911 | DNA sequencing with stacked nanopores | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2022-09-27 |
| 11430864 | VFET device with controllable top spacer | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2022-08-30 |
| 11404581 | Wimpy vertical transport field effect transistor with dipole liners | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2022-08-02 |
| 11398480 | Transistor having forked nanosheets with wraparound contacts | Jingyun Zhang, Ruilong Xie, Alexander Reznicek | 2022-07-26 |
| 11329167 | Fishbone long channel nanosheet device | Jingyun Zhang, Ruilong Xie, Alexander Reznicek | 2022-05-10 |
| 11302813 | Wrap around contact for nanosheet source drain epitaxy | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2022-04-12 |
| 11289484 | Forming source and drain regions for sheet transistors | Jingyun Zhang, Ruilong Xie, Alexander Reznicek | 2022-03-29 |
| 11251280 | Strained nanowire transistor with embedded epi | Heng Wu, Chen Zhang, Kangguo Cheng, Lan Yu | 2022-02-15 |
| 11222979 | Field-effect transistor devices with sidewall implant under bottom dielectric isolation | Alexander Reznicek, Jingyun Zhang, Ruilong Xie | 2022-01-11 |