Issued Patents 2022
Showing 25 most recent of 66 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527574 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Choonghyun Lee | 2022-12-13 |
| 11527616 | Vertical transport CMOS transistors with asymmetric threshold voltage | Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2022-12-13 |
| 11521927 | Buried power rail for scaled vertical transport field effect transistor | Ruilong Xie, Junli Wang, Choonghyun Lee | 2022-12-06 |
| 11515430 | Tilted nanowire transistor | Pouya Hashemi, Kangguo Cheng, Karthik Balakrishnan | 2022-11-29 |
| 11502169 | Nanosheet semiconductor devices with n/p boundary structure | Ruilong Xie, Jingyun Zhang, Xin Miao | 2022-11-15 |
| 11500614 | Stacked FET multiply and accumulate integrated circuit | Bahman Hekmatshoartabari, Ruilong Xie, Jingyun Zhang | 2022-11-15 |
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2022-11-08 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2022-11-08 |
| 11489045 | Nanosheet transistor with body contact | Ruilong Xie, Bahman Hekmatshoartabari, Tak H. Ning | 2022-11-01 |
| 11476264 | Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2022-10-18 |
| 11456308 | Low-voltage flash memory integrated with a vertical field effect transistor | Bahman Hekmatshoartabari, Takashi Ando, Nanbo Gong | 2022-09-27 |
| 11450659 | On-chip decoupling capacitor | Ruilong Xie, Jingyun Zhang, Lan Yu | 2022-09-20 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2022-09-13 |
| 11444185 | III-V lateral bipolar junction transistor on local facetted buried oxide layer | Pouya Hashemi, Mahmoud Khojasteh, Tak H. Ning | 2022-09-13 |
| 11437502 | III-V lateral bipolar junction transistor on local facetted buried oxide layer | Pouya Hashemi, Mahmoud Khojasteh, Tak H. Ning | 2022-09-06 |
| 11430514 | Setting an upper bound on RRAM resistance | Youngseok Kim, Soon-Cheon Seo, Choonghyun Lee, Injo Ok | 2022-08-30 |
| 11430660 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2022-08-30 |
| 11424403 | Magnetoresistive random-access memory cell having a metal line connection | Ruilong Xie, Bruce B. Doris, Michael Rizzolo | 2022-08-23 |
| 11424361 | Stacked vertical tunnel FET methods | Karthik Balakrishnan, Bahman Hekmatshoartabari | 2022-08-23 |
| 11411048 | Magnetoresistive random-access memory device structure | Heng Wu, Ruilong Xie, Julien Frougier, Chen Zhang, Bruce B. Doris | 2022-08-09 |
| 11411049 | Symmetric read operation resistive random-access memory cell with bipolar junction selector | Bahman Hekmatshoartabari, Ruilong Xie, Heng Wu | 2022-08-09 |
| 11404581 | Wimpy vertical transport field effect transistor with dipole liners | Xin Miao, Choonghyun Lee, Jingyun Zhang | 2022-08-02 |
| 11398480 | Transistor having forked nanosheets with wraparound contacts | Jingyun Zhang, Ruilong Xie, Xin Miao | 2022-07-26 |
| 11387342 | Multi threshold voltage for nanosheet | Jingyun Zhang, Takashi Ando, Choonghyun Lee | 2022-07-12 |
| 11380641 | Pillar bump with noble metal seed layer for advanced heterogeneous integration | Joseph F. Maniscalco, Kenneth Chun Kuen Cheng, Koichi Motoyama, Oscar van der Straten | 2022-07-05 |