| 11522045 |
Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. V. S. Surisetty |
2022-12-06 |
| 11476418 |
Phase change memory cell with a projection liner |
Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf +1 more |
2022-10-18 |
| 11456417 |
Integrated phase change memory cell projection liner and etch stop layer |
Kevin W. Brew, Iqbal Rashid Saraf, Nicole Saulnier, Matthew J. BrightSky, Robert L. Bruce |
2022-09-27 |
| 11456415 |
Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner |
Ruqiang Bao, Andrew H. Simon, Kevin W. Brew, Nicole Saulnier, Iqbal Rashid Saraf +2 more |
2022-09-27 |
| 11430514 |
Setting an upper bound on RRAM resistance |
Youngseok Kim, Soon-Cheon Seo, Choonghyun Lee, Alexander Reznicek |
2022-08-30 |
| 11328954 |
Bi metal subtractive etch for trench and via formation |
Yann Mignot, Chanro Park, Chih-Chao Yang, Hsueh-Chung Chen |
2022-05-10 |
| 11282947 |
Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base |
Alexander Reznicek, Choonghyun Lee, Soon-Cheon Seo |
2022-03-22 |
| 11271151 |
Phase change memory using multiple phase change layers and multiple heat conductors |
Balasubramanian Pranatharthiharan, Kevin W. Brew, Wei Wang |
2022-03-08 |
| 11264569 |
Phase change memory device |
Kevin W. Brew, Timothy Mathew Philip, Muthumanickam Sankarapandian, Sanjay C. Mehta, Nicole Saulnier +1 more |
2022-03-01 |
| 11244870 |
Maskless top source/drain epitaxial growth on vertical transport field effect transistor |
Choonghyun Lee, Shogo Mochizuki, Soon-Cheon Seo |
2022-02-08 |
| 11245025 |
Gate last vertical transport field effect transistor |
Choonghyun Lee, Soon-Cheon Seo, Alexander Reznicek |
2022-02-08 |
