Issued Patents 2022
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11520768 | Vertical transistor and method of forming the vertical transistor | Fee Li Lie, Junli Wang | 2022-12-06 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2022-10-18 |
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-08-23 |
| 11380778 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-07-05 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2022-06-07 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2022-04-26 |
| 11276576 | Gate metal patterning to avoid gate stack attack due to excessive wet etching | Junli Wang, Alexander Reznicek, Joshua M. Rubin | 2022-03-15 |
| 11276781 | Bottom source/drain for fin field effect transistors | Heng Wu, Gen Tsutsui, Kangguo Cheng | 2022-03-15 |
| 11257934 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-02-22 |
| 11244870 | Maskless top source/drain epitaxial growth on vertical transport field effect transistor | Choonghyun Lee, Injo Ok, Soon-Cheon Seo | 2022-02-08 |
| 11239360 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Brent A. Anderson, Hemanth Jagannathan, Junli Wang | 2022-02-01 |
| 11227937 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2022-01-18 |
| 11222981 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2022-01-11 |