Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11393725 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Vijay Narayanan, Terence B. Hook | 2022-07-19 |
| 11322588 | Contact source/drain resistance | Fee Li Lie, Choonghyun Lee, Kangguo Cheng, Oleg Gluschenkov | 2022-05-03 |
| 11271106 | Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2022-03-08 |
| 11257721 | Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2022-02-22 |
| 11251287 | Self-aligned uniform bottom spacers for VTFETS | Ruilong Xie, Jay William Strane, Eric R. Miller | 2022-02-15 |
| 11251285 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Paul C. Jamison, Choonghyun Lee | 2022-02-15 |
| 11239360 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Shogo Mochizuki, Brent A. Anderson, Junli Wang | 2022-02-01 |
| 11239119 | Replacement bottom spacer for vertical transport field effect transistors | Ruilong Xie, Heng Wu, Jay William Strane, Lan Yu, Tao Li | 2022-02-01 |
| 11217450 | Device with pure silicon oxide layer on silicon-germanium layer | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan | 2022-01-04 |
| 11217692 | Vertical field effect transistor with bottom spacer | Christopher J. Waskiewicz, Ruilong Xie, Jay William Strane | 2022-01-04 |