| 11462631 |
Sublithography gate cut physical unclonable function |
Kangguo Cheng, Fee Li Lie, Gauri Karve, Marc A. Bergendahl, John R. Sporre |
2022-10-04 |
| 11430753 |
Iterative formation of damascene interconnects |
Sean P. Kilcoyne, Michael V. Liguori, Michael J. Rondon |
2022-08-30 |
| 11424367 |
Wrap-around contacts including localized metal silicide |
Julien Frougier, Yann Mignot, Andrew M. Greene |
2022-08-23 |
| 11393869 |
Wafer level shim processing |
Jeffery H. Burkhart, Sean P. Kilcoyne |
2022-07-19 |
| 11316029 |
Sacrificial fin for contact self-alignment |
Yann Mignot, Indira Seshadri, Su Chen Fan, Christopher J. Waskiewicz |
2022-04-26 |
| 11257681 |
Using a same mask for direct print and self-aligned double patterning of nanosheets |
Stuart A. Sieg, Daniel James Dechene |
2022-02-22 |
| 11251287 |
Self-aligned uniform bottom spacers for VTFETS |
Ruilong Xie, Hemanth Jagannathan, Jay William Strane |
2022-02-15 |
| 11245027 |
Bottom source/drain etch with fin-cut-last-VTFET |
Tao Li, Indira Seshadri, Nelson Felix |
2022-02-08 |
| 11239316 |
Semiconductor device and method of forming the semiconductor device |
Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Robert R. Robison, John R. Sporre +1 more |
2022-02-01 |
| 11222813 |
Method of manufacturing wafer level low melting temperature interconnections |
Sean P. Kilcoyne, George Grama |
2022-01-11 |
