| 11495688 |
Source and drain epitaxy and isolation for gate structures |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2022-11-08 |
| 11488730 |
Coated fuel pellets with enhanced water and steam oxidation resistance |
Edward J. Lahoda, Lu Cai |
2022-11-01 |
| 11444083 |
Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths |
Kangguo Cheng, Juntao Li |
2022-09-13 |
| 11443857 |
Cold spray chromium coating for nuclear fuel rods |
Edward J. Lahoda, Zeses Karoutas, Sumit Ray, Kumar Sridharan, Benjamin Maier +1 more |
2022-09-13 |
| 11362193 |
Inverse T-shaped contact structures having air gap spacers |
Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu |
2022-06-14 |
| 11355588 |
Strained and unstrained semiconductor device features formed on the same substrate |
Kangguo Cheng, Juntao Li |
2022-06-07 |
| 11342230 |
Homogeneous densification of fill layers for controlled reveal of vertical fins |
Kangguo Cheng, Choonghyun Lee, Juntao Li, Heng Wu |
2022-05-24 |
| 11335773 |
Trench contact resistance reduction |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2022-05-17 |
| 11329143 |
Nanosheet transistors with thin inner spacers and tight pitch gate |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2022-05-10 |
| 11302799 |
Method and structure for forming a vertical field-effect transistor |
Choonghyun Lee, Kangguo Cheng, Juntao Li |
2022-04-12 |
| 11276612 |
Hybrid-channel nano-sheet FETS |
Zhenxing Bi, Kangguo Cheng, Wenyu Xu |
2022-03-15 |
| 11251267 |
Vertical transistors with multiple gate lengths |
Zhenxing Bi, Kangguo Cheng, Zheng Xu |
2022-02-15 |
| 11222981 |
Three-dimensional field effect device |
Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet |
2022-01-11 |
