Issued Patents 2022
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538925 | Ion implantation to form step-oxide trench MOSFET | Sipeng Gu, Yi Zheng, John Hautala | 2022-12-27 |
| 11527637 | Ion implantation to control formation of MOSFET trench-bottom oxide | Samphy Hong | 2022-12-13 |
| 11527412 | Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices | Samphy Hong, David J. Lee, Felix Levitov, Lei Zhong, Wei Zou | 2022-12-13 |
| 11444153 | Method of forming stress memorization layer on backside of semiconductor substrate and semiconductor device thereof | Wei Zou | 2022-09-13 |
| 11437488 | Split-gate MOSFET with gate shield | Samphy Hong, David J. Lee, Jason Appell | 2022-09-06 |
| 11430877 | Ion implantation to reduce nanosheet gate length variation | Sipeng Gu, Baonian Guo, Wei Zou, Kyuha Shim | 2022-08-30 |
| 11424125 | Angled ion implant to reduce MOSFET trench sidewall roughness | Wei Zou, Hans-Joachim L. Gossmann | 2022-08-23 |
| 11398347 | Inductor with ferromagnetic cores | Kangguo Cheng, Juntao Li, Geng Wang | 2022-07-26 |
| 11387338 | Methods for forming planar metal-oxide-semiconductor field-effect transistors | Samphy Hong, Lei Zhong, David J. Lee, Felix Levitov, Carlos Caballero +1 more | 2022-07-12 |