Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538925 | Ion implantation to form step-oxide trench MOSFET | Yi Zheng, Qintao Zhang, John Hautala | 2022-12-27 |
| 11502200 | Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material | Judson R. Holt, Haiting Wang, Yanping Shen | 2022-11-15 |
| 11437490 | Methods of forming a replacement gate structure for a transistor device | Haiting Wang | 2022-09-06 |
| 11437568 | Memory device and methods of making such a memory device | Yanping Shen, Haiting Wang | 2022-09-06 |
| 11430877 | Ion implantation to reduce nanosheet gate length variation | Baonian Guo, Qintao Zhang, Wei Zou, Kyuha Shim | 2022-08-30 |
| 11329158 | Three part source/drain region structure for transistor | Halting Wang, Judson R. Holt | 2022-05-10 |
| 11222844 | Via structures for use in semiconductor devices | Jun Lian, Haiting Wang, Yanping Shen | 2022-01-11 |