Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11502200 | Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material | Sipeng Gu, Judson R. Holt, Haiting Wang | 2022-11-15 |
| 11482456 | Forming two portion spacer after metal gate and contact formation, and related IC structure | Hui Zang, Jiehui Shu | 2022-10-25 |
| 11437568 | Memory device and methods of making such a memory device | Haiting Wang, Sipeng Gu | 2022-09-06 |
| 11342453 | Field effect transistor with asymmetric gate structure and method | Haiting Wang, Zhiqing Li | 2022-05-24 |
| 11264504 | Active and dummy fin structures | Haiting Wang, Hong Yu | 2022-03-01 |
| 11239336 | Integrated circuit structure with niobium-based silicide layer and methods to form same | Wei Hong, Domingo A. Ferrer, Hong Yu | 2022-02-01 |
| 11222844 | Via structures for use in semiconductor devices | Jun Lian, Sipeng Gu, Haiting Wang | 2022-01-11 |