Issued Patents 2022
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11522068 | IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures | Chang Seo Park, Shimpei Yamaguchi, Tao Han, Yong Yang, Jinping Liu +1 more | 2022-12-06 |
| 11482456 | Forming two portion spacer after metal gate and contact formation, and related IC structure | Yanping Shen, Hui Zang | 2022-10-25 |
| 11362178 | Asymmetric source drain structures | Rinus Tek Po Lee, Baofu Zhu | 2022-06-14 |
| 11349030 | Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices | Haiting Wang, Hong Yu | 2022-05-31 |
| 11348870 | Electrical fuse formation during a multiple patterning process | Xiaoqiang Zhang, Haizhou Yin, Moosung Chae, Jinping Liu, Hui Zang | 2022-05-31 |
| 11349028 | Semiconductor device with gate cut structure | — | 2022-05-31 |
| 11264382 | Fin-type field effect transistor with reduced fin bulge and method | Bharat Krishnan | 2022-03-01 |
| 11217584 | Limiting lateral epitaxy growth at N-P boundary using inner spacer, and related structure | Judson R. Holt | 2022-01-04 |