Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515392 | Semiconductor divice having a carbon containing insulation layer formed under the source/drain | Shay Reboh, Remi Coquand, Nicolas Loubet, Jingyun Zhang | 2022-11-29 |
| 11502202 | Transistors with uniform source/drain epitaxy | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2022-11-15 |
| 11404560 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2022-08-02 |
| 11295985 | Forming a backside ground or power plane in a stacked vertical transport field effect transistor | Chen Zhang, Kangguo Cheng, Lawrence A. Clevenger | 2022-04-05 |
| 11245020 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega | 2022-02-08 |
| 11244872 | FinFET complementary metal-oxide-semiconductor (CMOS) devices | Chen Zhang, Teresa J. Wu | 2022-02-08 |
| 11239342 | Vertical transistors having improved control of top source or drain junctions | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2022-02-01 |