| 11527647 |
Field effect transistor (FET) devices |
Takashi Ando, Cheng Chi, Praneet Adusumilli |
2022-12-13 |
| 11502252 |
Resistive switching memory cell |
Takashi Ando, Praneet Adusumilli, Cheng Chi |
2022-11-15 |
| 11481611 |
RRAM crossbar array structure for multi-task learning |
Takashi Ando, Hari V. Mallela |
2022-10-25 |
| 11456416 |
Resistive switching memory cell |
Praneet Adusumilli, Takashi Ando, Cheng Chi |
2022-09-27 |
| 11430954 |
Resistance drift mitigation in non-volatile memory cell |
Praneet Adusumilli, Anirban Chandra, Takashi Ando, Cheng Chi |
2022-08-30 |
| 11424362 |
NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets |
Takashi Ando, Cheng Chi, Praneet Adusumilli |
2022-08-23 |
| 11342446 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla |
2022-05-24 |
| 11335730 |
Vertical resistive memory device with embedded selectors |
Takashi Ando, Praneet Adusumilli, Cheng Chi |
2022-05-17 |
| 11289573 |
Contact resistance reduction in nanosheet device structure |
Heng Wu, Dechao Guo, Ruqiang Bao, Junli Wang, Lan Yu +1 more |
2022-03-29 |
| 11244864 |
Reducing parasitic capacitance within semiconductor devices |
Ruilong Xie, Alexander Reznicek, Kangguo Cheng |
2022-02-08 |
| 11245020 |
Gate-all-around field effect transistor having multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Tenko Yamashita |
2022-02-08 |
