Issued Patents 2022
Showing 26–50 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11424403 | Magnetoresistive random-access memory cell having a metal line connection | Bruce B. Doris, Michael Rizzolo, Alexander Reznicek | 2022-08-23 |
| 11411048 | Magnetoresistive random-access memory device structure | Heng Wu, Alexander Reznicek, Julien Frougier, Chen Zhang, Bruce B. Doris | 2022-08-09 |
| 11411049 | Symmetric read operation resistive random-access memory cell with bipolar junction selector | Alexander Reznicek, Bahman Hekmatshoartabari, Heng Wu | 2022-08-09 |
| 11398480 | Transistor having forked nanosheets with wraparound contacts | Jingyun Zhang, Alexander Reznicek, Xin Miao | 2022-07-26 |
| 11387319 | Nanosheet transistor device with bottom isolation | Veeraraghavan S. Basker, Andrew M. Greene, Pietro Montanini | 2022-07-12 |
| 11380842 | Phase change memory cell with second conductive layer | Juntao Li, Kangguo Cheng, Junli Wang | 2022-07-05 |
| 11374167 | Reducing parasitic bottom electrode resistance of embedded MRAM | Julien Frougier, Alexander Reznicek, Bruce B. Doris | 2022-06-28 |
| 11374111 | Forming replacement low-k spacer in tight pitch fin field effect transistors | Xiuyu Cai, Chun-Chen Yeh, Qing Liu | 2022-06-28 |
| 11362194 | Transistor having confined source/drain regions with wrap-around source/drain contacts | Alexander Reznicek, Kangguo Cheng, Marc A. Bergendahl | 2022-06-14 |
| 11355633 | Vertical field effect transistor with bottom source-drain region | Alexander Reznicek, Chun-Chen Yeh, Balasubramanian S. Pranatharthi Haran | 2022-06-07 |
| 11349001 | Replacement gate cross-couple for static random-access memory scaling | Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker, Juntao Li | 2022-05-31 |
| 11335804 | Scalable vertical transistor bottom source-drain epitaxy | Chun-Chen Yeh, Alexander Reznicek | 2022-05-17 |
| 11329167 | Fishbone long channel nanosheet device | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2022-05-10 |
| 11322402 | Self-aligned top via scheme | Chih-Chao Yang, Carl Radens, Juntao Li, Kangguo Cheng | 2022-05-03 |
| 11315799 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Chanro Park, Chih-Chao Yang, Kangguo Cheng, Juntao Li | 2022-04-26 |
| 11316105 | Phase change material switch and method of fabricating same | Tian Shen, Kevin W. Brew, Heng Wu, Jingyun Zhang | 2022-04-26 |
| 11315938 | Stacked nanosheet rom | Alexander Reznicek, Karthik Balakrishnan, Bahman Hekmatshoartabari | 2022-04-26 |
| 11309220 | Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor | Chanro Park, Min Gyu Sung | 2022-04-19 |
| 11309319 | Structures and SRAM bit cells integrating complementary field-effect transistors | Randy W. Mann, Bipul C. Paul, Julien Frougier | 2022-04-19 |
| 11302794 | FinFET with dual work function metal | Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2022-04-12 |
| 11295983 | Transistor having source or drain formation assistance regions with improved bottom isolation | Alexander Reznicek, Effendi Leobandung, Jingyun Zhang | 2022-04-05 |
| 11295988 | Semiconductor FET device with bottom isolation and high-κ first | Julien Frougier, Jingyun Zhang, Alexander Reznicek, Takashi Ando | 2022-04-05 |
| 11289484 | Forming source and drain regions for sheet transistors | Jingyun Zhang, Xin Miao, Alexander Reznicek | 2022-03-29 |
| 11282961 | Enhanced bottom dielectric isolation in gate-all-around devices | Julien Frougier, Andrew M. Greene, Kangguo Cheng | 2022-03-22 |
| 11282838 | Stacked gate structures | Chen Zhang, Dechao Guo, Junli Wang, Kangguo Cheng, Juntao Li +5 more | 2022-03-22 |