Issued Patents 2022
Showing 51–70 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11282961 | Enhanced bottom dielectric isolation in gate-all-around devices | Julien Frougier, Andrew M. Greene, Ruilong Xie | 2022-03-22 |
| 11282838 | Stacked gate structures | Chen Zhang, Dechao Guo, Junli Wang, Ruilong Xie, Juntao Li +5 more | 2022-03-22 |
| 11276781 | Bottom source/drain for fin field effect transistors | Heng Wu, Shogo Mochizuki, Gen Tsutsui | 2022-03-15 |
| 11276612 | Hybrid-channel nano-sheet FETS | Zhenxing Bi, Peng Xu, Wenyu Xu | 2022-03-15 |
| 11270935 | Metallization layer formation process | Ruilong Xie, Chih-Chao Yang, Jing Guo | 2022-03-08 |
| 11270768 | Failure prevention of chip power network | Zheng Xu, Dexin Kong, Juntao Li | 2022-03-08 |
| 11264481 | Self-aligned source and drain contacts | Chanro Park, Ruilong Xie, Juntao Li | 2022-03-01 |
| 11257934 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Juntao Li, Choonghyun Lee, Shogo Mochizuki | 2022-02-22 |
| 11251280 | Strained nanowire transistor with embedded epi | Heng Wu, Chen Zhang, Xin Miao, Lan Yu | 2022-02-15 |
| 11251288 | Nanosheet transistor with asymmetric gate stack | Ruilong Xie, Carl Radens, Juntao Li, Dechao Guo, Tao Li +1 more | 2022-02-15 |
| 11251267 | Vertical transistors with multiple gate lengths | Zhenxing Bi, Peng Xu, Zheng Xu | 2022-02-15 |
| 11244869 | Fabrication of logic devices and power devices on the same substrate | Juntao Li, Liying Jiang, John G. Gaudiello | 2022-02-08 |
| 11244864 | Reducing parasitic capacitance within semiconductor devices | Ruilong Xie, Reinaldo Vega, Alexander Reznicek | 2022-02-08 |
| 11239342 | Vertical transistors having improved control of top source or drain junctions | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2022-02-01 |
| 11239418 | Memory device having a ring heater | — | 2022-02-01 |
| 11239165 | Method of forming an interconnect structure with enhanced corner connection | Ruilong Xie, Christopher J. Waskiewicz, Chih-Chao Yang | 2022-02-01 |
| 11233091 | Resistive memory cell having a single fin | — | 2022-01-25 |
| 11227937 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Shogo Mochizuki, Choonghyun Lee, Juntao Li | 2022-01-18 |
| 11221359 | Determining device operability via metal-induced layer exchange | Dexin Kong | 2022-01-11 |
| 11217680 | Vertical field-effect transistor with T-shaped gate | Yi Song, Juntao Li, Huimei Zhou, Ardasheir Rahman | 2022-01-04 |