| 10879365 |
Transistors with non-vertical gates |
Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Matthew V. Metz, Harold W. Kennel +3 more |
2020-12-29 |
$24,597,000 |
| 10878889 |
High retention time memory element with dual gate devices |
Rafael Rios, Van H. Le, Jack T. Kavalieros, Mesut Meterelliyoz |
2020-12-29 |
$24,597,000 |
| 10872660 |
Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices |
Abhishek A. Sharma, Ravi Pillarisetty, Van H. Le |
2020-12-22 |
$47,741,000 |
| 10861939 |
Stiff quantum layers to slow and or stop defect propagation |
Matthew V. Metz, Harold W. Kennel, Cheng-Ying Huang, Sean T. Ma, Willy Rachmady |
2020-12-08 |
$30,873,000 |
| 10847619 |
Supperlatice channel included in a trench |
Cheng-Ying Huang, Matthew V. Metz, Willy Rachmady, Jack T. Kavalieros |
2020-11-24 |
$25,522,000 |
| 10847656 |
Fabrication of non-planar IGZO devices for improved electrostatics |
Van H. Le, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic, Kent Millard +4 more |
2020-11-24 |
$25,522,000 |
| 10818793 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more |
2020-10-27 |
$34,955,000 |
| 10818799 |
Vertical transistor devices and techniques |
Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Willy Rachmady |
2020-10-27 |
$34,955,000 |
| 10811461 |
Access transmission gate |
Abhishek A. Sharma, Ravi Pillarisetty, Van H. Le |
2020-10-20 |
$43,271,000 |
| 10797150 |
Differential work function between gate stack metals to reduce parasitic capacitance |
Sean T. Ma, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi +3 more |
2020-10-06 |
$29,609,000 |
| 10784170 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more |
2020-09-22 |
$34,575,000 |
| 10770593 |
Beaded fin transistor |
Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Anand S. Murthy +1 more |
2020-09-08 |
$26,363,000 |
| 10756198 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick, Robert S. Chau |
2020-08-25 |
$27,661,000 |
| 10749032 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers |
Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady +2 more |
2020-08-18 |
$29,577,000 |
| 10748900 |
Fin-based III-V/SI or GE CMOS SAGE integration |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +1 more |
2020-08-18 |
$29,577,000 |
| 10734511 |
High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer |
Cheng-Ying Huang, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Benjamin Chu-Kung +1 more |
2020-08-04 |
$32,661,000 |
| 10734488 |
Aluminum indium phosphide subfin germanium channel transistors |
Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung +1 more |
2020-08-04 |
$32,661,000 |
| 10727138 |
Integration of single crystalline transistors in back end of line (BEOL) |
Van H. Le, Marko Radosavljevic, Benjamin Chu-Kung, Rafael Rios |
2020-07-28 |
$26,273,000 |
| 10727339 |
Selectively regrown top contact for vertical semiconductor devices |
Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Marko Radosavljevic, Ravi Pillarisetty +3 more |
2020-07-28 |
$26,273,000 |
| 10707319 |
Gate electrode having a capping layer |
Mark L. Doczy, Suman Datta, Justin K. Brask, Matthew V. Metz |
2020-07-07 |
$29,601,000 |
| 10693008 |
Cladding layer epitaxy via template engineering for heterogeneous integration on silicon |
Niloy Mukherjee, Marko Radosavljevic, Jack T. Kavalieros, Ravi Pillarisetty, Niti Goel +2 more |
2020-06-23 |
$27,746,000 |
| 10665688 |
Low Schottky barrier contact structure for Ge NMOS |
Willy Rachmady, Matthew V. Metz, Benjamin Chu-Kung, Van H. Le, Ashish Agrawal +1 more |
2020-05-26 |
$31,191,000 |
| 10659046 |
Local cell-level power gating switch |
Rafael Rios, Van H. Le, Jack T. Kavalieros |
2020-05-19 |
$31,576,000 |
| 10651288 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more |
2020-05-12 |
$29,489,000 |
| 10651313 |
Reduced transistor resistance using doped layer |
Cheng-Ying Huang, Matthew V. Metz, Willy Rachmady, Jack T. Kavalieros, Sean T. Ma |
2020-05-12 |
$29,489,000 |
