| 10818793 |
Indium-rich NMOS transistor channels |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2020-10-27 |
| 10797150 |
Differential work function between gate stack metals to reduce parasitic capacitance |
Sean T. Ma, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more |
2020-10-06 |
| 10770593 |
Beaded fin transistor |
Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more |
2020-09-08 |
| 10749032 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2020-08-18 |
| 10748900 |
Fin-based III-V/SI or GE CMOS SAGE integration |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +1 more |
2020-08-18 |
| 10734412 |
Backside contact resistance reduction for semiconductor devices with metallization on both sides |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Mauro J. Kobrinsky, Patrick Morrow |
2020-08-04 |
| 10651288 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors |
Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more |
2020-05-12 |
| 10644137 |
III-V finfet transistor with V-groove S/D profile for improved access resistance |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Sanaz K. Gardner +3 more |
2020-05-05 |
| 10636912 |
FINFET transistor having a tapered subfin structure |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Sean T. Ma +2 more |
2020-04-28 |
| 10586848 |
Apparatus and methods to create an active channel having indium rich side and bottom surfaces |
Anand S. Murthy, Glenn A. Glass, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more |
2020-03-10 |
| 10580865 |
Transistor with a sub-fin dielectric region under a gate |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi, Jack T. Kavalieros +2 more |
2020-03-03 |
| 10573750 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim |
2020-02-25 |
| 10559683 |
Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more |
2020-02-11 |
| 10559689 |
Crystallized silicon carbon replacement material for NMOS source/drain regions |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine |
2020-02-11 |
| 10546858 |
Low damage self-aligned amphoteric FINFET tip doping |
Jack T. Kavalieros, Anand S. Murthy, Willy Rachmady, Matthew V. Metz, Gilbert Dewey +2 more |
2020-01-28 |
| 10529808 |
Dopant diffusion barrier for source/drain to curb dopant atom diffusion |
Harold W. Kennel, Glenn A. Glass, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more |
2020-01-07 |