Issued Patents 2020
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10818793 | Indium-rich NMOS transistor channels | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more | 2020-10-27 |
| 10797150 | Differential work function between gate stack metals to reduce parasitic capacitance | Sean T. Ma, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2020-10-06 |
| 10770593 | Beaded fin transistor | Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more | 2020-09-08 |
| 10749032 | Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2020-08-18 |
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-08-18 |
| 10734412 | Backside contact resistance reduction for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Mauro J. Kobrinsky, Patrick Morrow | 2020-08-04 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Sanaz K. Gardner +3 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Sean T. Ma +2 more | 2020-04-28 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Anand S. Murthy, Glenn A. Glass, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi, Jack T. Kavalieros +2 more | 2020-03-03 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim | 2020-02-25 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more | 2020-02-11 |
| 10559689 | Crystallized silicon carbon replacement material for NMOS source/drain regions | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine | 2020-02-11 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Anand S. Murthy, Willy Rachmady, Matthew V. Metz, Gilbert Dewey +2 more | 2020-01-28 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Harold W. Kennel, Glenn A. Glass, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more | 2020-01-07 |