Issued Patents 2020
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879365 | Transistors with non-vertical gates | Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Gilbert Dewey, Harold W. Kennel +3 more | 2020-12-29 |
| 10861939 | Stiff quantum layers to slow and or stop defect propagation | Gilbert Dewey, Harold W. Kennel, Cheng-Ying Huang, Sean T. Ma, Willy Rachmady | 2020-12-08 |
| 10847619 | Supperlatice channel included in a trench | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros | 2020-11-24 |
| 10818793 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more | 2020-10-27 |
| 10797150 | Differential work function between gate stack metals to reduce parasitic capacitance | Sean T. Ma, Willy Rachmady, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2020-10-06 |
| 10784170 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2020-09-22 |
| 10784352 | Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench | Sanaz K. Gardner, Willy Rachmady, Van H. Le, Seiyon Kim, Ashish Agrawal +1 more | 2020-09-22 |
| 10770593 | Beaded fin transistor | Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-09-08 |
| 10756198 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros, Nancy Zelick, Robert S. Chau | 2020-08-25 |
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-08-18 |
| 10734488 | Aluminum indium phosphide subfin germanium channel transistors | Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2020-08-04 |
| 10734511 | High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer | Cheng-Ying Huang, Willy Rachmady, Jack T. Kavalieros, Benjamin Chu-Kung, Gilbert Dewey +1 more | 2020-08-04 |
| 10707319 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Suman Datta, Justin K. Brask | 2020-07-07 |
| 10665688 | Low Schottky barrier contact structure for Ge NMOS | Willy Rachmady, Benjamin Chu-Kung, Van H. Le, Gilbert Dewey, Ashish Agrawal +1 more | 2020-05-26 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey +2 more | 2020-05-12 |
| 10651313 | Reduced transistor resistance using doped layer | Cheng-Ying Huang, Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Sean T. Ma | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra, Sanaz K. Gardner +3 more | 2020-05-05 |
| 10644111 | Strained silicon layer with relaxed underlayer | Benjamin Chu-Kung, Van H. Le, Ashish Agrawal, Jack T. Kavalieros, Seung Hoon Sung +2 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Chandra S. Mohapatra, Sean T. Ma +2 more | 2020-04-28 |
| 10593785 | Transistors having ultra thin fin profiles and their methods of fabrication | Sanaz K. Gardner, Willy Rachmady, Van H. Le, Seiyon Kim, Ashish Agrawal +1 more | 2020-03-17 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi, Jack T. Kavalieros +2 more | 2020-03-03 |
| 10580882 | Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Van H. Le, Seiyon Kim +1 more | 2020-03-03 |
| 10573717 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2020-02-25 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +2 more | 2020-02-11 |