| 10878889 |
High retention time memory element with dual gate devices |
Rafael Rios, Gilbert Dewey, Jack T. Kavalieros, Mesut Meterelliyoz |
2020-12-29 |
$24,597,000 |
| 10872660 |
Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices |
Abhishek A. Sharma, Ravi Pillarisetty, Gilbert Dewey |
2020-12-22 |
$47,741,000 |
| 10847656 |
Fabrication of non-planar IGZO devices for improved electrostatics |
Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic, Kent Millard +4 more |
2020-11-24 |
$25,522,000 |
| 10818799 |
Vertical transistor devices and techniques |
Ravi Pillarisetty, Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady |
2020-10-27 |
$34,955,000 |
| 10811461 |
Access transmission gate |
Abhishek A. Sharma, Ravi Pillarisetty, Gilbert Dewey |
2020-10-20 |
$43,271,000 |
| 10784352 |
Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench |
Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more |
2020-09-22 |
$34,575,000 |
| 10784170 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2020-09-22 |
$34,575,000 |
| 10763349 |
Quantum dot devices with modulation doped stacks |
Ravi Pillarisetty, Jeanette M. Roberts, James S. Clarke, Zachary R. Yoscovits, David J. Michalak |
2020-09-01 |
$24,773,000 |
| 10763347 |
Quantum well stacks for quantum dot devices |
Payam Amin, Nicole K. Thomas, James S. Clarke, Jessica M. Torres, Ravi Pillarisetty +6 more |
2020-09-01 |
$24,773,000 |
| 10748993 |
Strain compensation in transistors |
Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2020-08-18 |
$29,577,000 |
| 10734488 |
Aluminum indium phosphide subfin germanium channel transistors |
Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2020-08-04 |
$32,661,000 |
| 10727339 |
Selectively regrown top contact for vertical semiconductor devices |
Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Marko Radosavljevic, Ravi Pillarisetty +3 more |
2020-07-28 |
$26,273,000 |
| 10727138 |
Integration of single crystalline transistors in back end of line (BEOL) |
Marko Radosavljevic, Benjamin Chu-Kung, Rafael Rios, Gilbert Dewey |
2020-07-28 |
$26,273,000 |
| 10720508 |
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping |
Scott B. Clendenning, Martin M. Mitan, Szuya S. Liao |
2020-07-21 |
$33,796,000 |
| 10693008 |
Cladding layer epitaxy via template engineering for heterogeneous integration on silicon |
Niloy Mukherjee, Marko Radosavljevic, Jack T. Kavalieros, Ravi Pillarisetty, Niti Goel +2 more |
2020-06-23 |
$27,746,000 |
| 10665688 |
Low Schottky barrier contact structure for Ge NMOS |
Willy Rachmady, Matthew V. Metz, Benjamin Chu-Kung, Gilbert Dewey, Ashish Agrawal +1 more |
2020-05-26 |
$31,191,000 |
| 10659046 |
Local cell-level power gating switch |
Rafael Rios, Gilbert Dewey, Jack T. Kavalieros |
2020-05-19 |
$31,576,000 |
| 10644111 |
Strained silicon layer with relaxed underlayer |
Benjamin Chu-Kung, Ashish Agrawal, Jack T. Kavalieros, Matthew V. Metz, Seung Hoon Sung +2 more |
2020-05-05 |
$29,615,000 |
| 10644140 |
Integrated circuit die having back-end-of-line transistors |
Gilbert Dewey, Marko Radosavljevic, Rafael Rios, Jack T. Kavalieros |
2020-05-05 |
$29,615,000 |
| 10644123 |
Systems, methods, and apparatuses for implementing a high mobility low contact resistance semiconducting oxide in metal contact vias for thin film transistors |
Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Shriram Shivaraman |
2020-05-05 |
$29,615,000 |
| 10644112 |
Systems, methods and devices for isolation for subfin leakage |
Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal, Harold W. Kennel +5 more |
2020-05-05 |
$29,615,000 |
| 10593785 |
Transistors having ultra thin fin profiles and their methods of fabrication |
Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more |
2020-03-17 |
$21,927,000 |
| 10580882 |
Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) |
Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Seiyon Kim +1 more |
2020-03-03 |
$18,388,000 |
| 10565138 |
Memory device with multiple memory arrays to facilitate in-memory computation |
Jack T. Kavalieros, Ram Krishnamurthy, Sasikanth Manipatruni, Gregory K. Chen, Amrita Mathuriya +5 more |
2020-02-18 |
$23,634,000 |
