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Techniques for current-sensing circuit design for compute-in-memory |
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Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices |
Ravi Pillarisetty, Van H. Le, Gilbert Dewey |
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Binary, ternary and bit serial compute-in-memory circuits |
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Digital bit-serial multi-multiply-and-accumulate compute in memory |
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Full-rail digital read compute-in-memory circuit |
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Vertical transistor devices and techniques |
Ravi Pillarisetty, Van H. Le, Gilbert Dewey, Willy Rachmady |
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Access transmission gate |
Ravi Pillarisetty, Van H. Le, Gilbert Dewey |
2020-10-20 |
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Temperature management of electronic circuitry of electronic devices, memory devices, and computing devices |
Ravi Pillarisetty, Elijah V. Karpov, Prashant Majhi, Brian S. Doyle |
2020-10-20 |
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In-memory multiply and accumulate with global charge-sharing |
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Programmable interface to in-memory cache processor |
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Binary, ternary and bit serial compute-in-memory circuits |
Phil Knag, Gregory K. Chen, Raghavan Kumar, Huseyin Ekin Sumbul, Sasikanth Manipatruni +3 more |
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Memory device with multiple memory arrays to facilitate in-memory computation |
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