Issued Patents 2020
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879365 | Transistors with non-vertical gates | Cheng-Ying Huang, Sean T. Ma, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more | 2020-12-29 |
| 10861939 | Stiff quantum layers to slow and or stop defect propagation | Matthew V. Metz, Gilbert Dewey, Harold W. Kennel, Cheng-Ying Huang, Sean T. Ma | 2020-12-08 |
| 10854752 | High mobility strained channels for fin-based NMOS transistors | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy +1 more | 2020-12-01 |
| 10847619 | Supperlatice channel included in a trench | Cheng-Ying Huang, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros | 2020-11-24 |
| 10840352 | Nanowire transistors with embedded dielectric spacers | Seung Hoon Sung, Jack T. Kavalieros, Sanaz K. Gardner | 2020-11-17 |
| 10818793 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Jack T. Kavalieros +3 more | 2020-10-27 |
| 10818799 | Vertical transistor devices and techniques | Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Gilbert Dewey | 2020-10-27 |
| 10804357 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2020-10-13 |
| 10797150 | Differential work function between gate stack metals to reduce parasitic capacitance | Sean T. Ma, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2020-10-06 |
| 10784170 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2020-09-22 |
| 10784360 | Transistor gate trench engineering to decrease capacitance and resistance | Seung Hoon Sung, Jack T. Kavalieros, Han Wui Then, Marko Radosavljevic | 2020-09-22 |
| 10784352 | Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench | Sanaz K. Gardner, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more | 2020-09-22 |
| 10770593 | Beaded fin transistor | Gilbert Dewey, Tahir Ghani, Jack T. Kavalieros, Matthew V. Metz, Anand S. Murthy +1 more | 2020-09-08 |
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-08-18 |
| 10748993 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Ravi Pillarisetty, Jack T. Kavalieros | 2020-08-18 |
| 10749032 | Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Gilbert Dewey +2 more | 2020-08-18 |
| 10734511 | High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer | Cheng-Ying Huang, Jack T. Kavalieros, Matthew V. Metz, Benjamin Chu-Kung, Gilbert Dewey +1 more | 2020-08-04 |
| 10734488 | Aluminum indium phosphide subfin germanium channel transistors | Matthew V. Metz, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2020-08-04 |
| 10665688 | Low Schottky barrier contact structure for Ge NMOS | Matthew V. Metz, Benjamin Chu-Kung, Van H. Le, Gilbert Dewey, Ashish Agrawal +1 more | 2020-05-26 |
| 10651313 | Reduced transistor resistance using doped layer | Cheng-Ying Huang, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma | 2020-05-12 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Gilbert Dewey, Jack T. Kavalieros +2 more | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra, Sanaz K. Gardner +3 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Chandra S. Mohapatra, Sean T. Ma +2 more | 2020-04-28 |
| 10636871 | Silicon and silicon germanium nanowire structures | Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Stephen M. Cea, Martin D. Giles +3 more | 2020-04-28 |
| 10593785 | Transistors having ultra thin fin profiles and their methods of fabrication | Sanaz K. Gardner, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more | 2020-03-17 |