| 10879353 |
Selective germanium P-contact metalization through trench |
Anand S. Murthy, Tahir Ghani |
2020-12-29 |
| 10879241 |
Techniques for controlling transistor sub-fin leakage |
Prashant Majhi, Anand S. Murthy, Tahir Ghani, Daniel B. Aubertine, Heidi M. Meyer +2 more |
2020-12-29 |
| 10854752 |
High mobility strained channels for fin-based NMOS transistors |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +1 more |
2020-12-01 |
| 10833076 |
Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse |
Nabil G. Mistkawi |
2020-11-10 |
| 10818793 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2020-10-27 |
| 10811496 |
Transistor devices having source/drain structure configured with high germanium content portion |
Anand S. Murthy |
2020-10-20 |
| 10755984 |
Replacement channel etch for high quality interface |
Ying-Feng PANG, Nabil G. Mistkawi, Anand S. Murthy, Tahir Ghani, Huang-Lin Chao |
2020-08-25 |
| 10749032 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers |
Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2020-08-18 |
| 10734412 |
Backside contact resistance reduction for semiconductor devices with metallization on both sides |
Anand S. Murthy, Karthik Jambunathan, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow |
2020-08-04 |
| 10700178 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Anand S. Murthy, Tahir Ghani |
2020-06-30 |
| 10692973 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2020-06-23 |
| 10692974 |
Deuterium-based passivation of non-planar transistor interfaces |
Prashant Majhi, Anand S. Murthy, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more |
2020-06-23 |
| 10672868 |
Methods of forming self aligned spacers for nanowire device structures |
Karthik Jambunathan, Anand S. Murthy, Jun Sung Kang, Seiyon Kim |
2020-06-02 |
| 10651288 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors |
Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more |
2020-05-12 |
| 10644112 |
Systems, methods and devices for isolation for subfin leakage |
Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more |
2020-05-05 |
| 10586848 |
Apparatus and methods to create an active channel having indium rich side and bottom surfaces |
Chandra S. Mohapatra, Anand S. Murthy, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more |
2020-03-10 |
| 10573750 |
Methods of forming doped source/drain contacts and structures formed thereby |
Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim |
2020-02-25 |
| 10559683 |
Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors |
Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more |
2020-02-11 |
| 10559689 |
Crystallized silicon carbon replacement material for NMOS source/drain regions |
Karthik Jambunathan, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine, Chandra S. Mohapatra |
2020-02-11 |
| 10553680 |
Selective germanium P-contact metalization through trench |
Anand S. Murthy, Tahir Ghani |
2020-02-04 |
| 10541334 |
Techniques for integration of Ge-rich p-MOS source/drain |
Anand S. Murthy, Tahir Ghani, Ying-Feng PANG, Nabil G. Mistkawi |
2020-01-21 |
| 10535735 |
Contact resistance reduced P-MOS transistors employing Ge-rich contact layer |
Anand S. Murthy |
2020-01-14 |
| 10529808 |
Dopant diffusion barrier for source/drain to curb dopant atom diffusion |
Chandra S. Mohapatra, Harold W. Kennel, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more |
2020-01-07 |