| 10879241 |
Techniques for controlling transistor sub-fin leakage |
Glenn A. Glass, Prashant Majhi, Anand S. Murthy, Tahir Ghani, Daniel B. Aubertine +2 more |
2020-12-29 |
| 10749032 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers |
Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +2 more |
2020-08-18 |
| 10734412 |
Backside contact resistance reduction for semiconductor devices with metallization on both sides |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow |
2020-08-04 |
| 10692973 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2020-06-23 |
| 10672868 |
Methods of forming self aligned spacers for nanowire device structures |
Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Seiyon Kim |
2020-06-02 |
| 10573750 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim |
2020-02-25 |
| 10559689 |
Crystallized silicon carbon replacement material for NMOS source/drain regions |
Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine, Chandra S. Mohapatra |
2020-02-11 |