| 10879365 |
Transistors with non-vertical gates |
Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz +3 more |
2020-12-29 |
$24,597,000 |
| 10879353 |
Selective germanium P-contact metalization through trench |
Glenn A. Glass, Tahir Ghani |
2020-12-29 |
$24,597,000 |
| 10879241 |
Techniques for controlling transistor sub-fin leakage |
Glenn A. Glass, Prashant Majhi, Tahir Ghani, Daniel B. Aubertine, Heidi M. Meyer +2 more |
2020-12-29 |
$24,597,000 |
| 10854752 |
High mobility strained channels for fin-based NMOS transistors |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Willy Rachmady +1 more |
2020-12-01 |
$25,476,000 |
| 10818793 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2020-10-27 |
$34,955,000 |
| 10811496 |
Transistor devices having source/drain structure configured with high germanium content portion |
Glenn A. Glass |
2020-10-20 |
$43,271,000 |
| 10804357 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more |
2020-10-13 |
$679,000 |
| 10797150 |
Differential work function between gate stack metals to reduce parasitic capacitance |
Sean T. Ma, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey +3 more |
2020-10-06 |
$29,609,000 |
| 10770593 |
Beaded fin transistor |
Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more |
2020-09-08 |
$26,363,000 |
| 10755984 |
Replacement channel etch for high quality interface |
Glenn A. Glass, Ying-Feng PANG, Nabil G. Mistkawi, Tahir Ghani, Huang-Lin Chao |
2020-08-25 |
$27,661,000 |
| 10749032 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers |
Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2020-08-18 |
$29,577,000 |
| 10748900 |
Fin-based III-V/SI or GE CMOS SAGE integration |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +1 more |
2020-08-18 |
$29,577,000 |
| 10734412 |
Backside contact resistance reduction for semiconductor devices with metallization on both sides |
Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow |
2020-08-04 |
$32,661,000 |
| 10700178 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Glenn A. Glass, Tahir Ghani |
2020-06-30 |
$33,333,000 |
| 10692973 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2020-06-23 |
$27,746,000 |
| 10692974 |
Deuterium-based passivation of non-planar transistor interfaces |
Prashant Majhi, Glenn A. Glass, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more |
2020-06-23 |
$27,746,000 |
| 10672868 |
Methods of forming self aligned spacers for nanowire device structures |
Karthik Jambunathan, Glenn A. Glass, Jun Sung Kang, Seiyon Kim |
2020-06-02 |
$32,838,000 |
| 10651288 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors |
Chandra S. Mohapatra, Glenn A. Glass, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more |
2020-05-12 |
$29,489,000 |
| 10644137 |
III-V finfet transistor with V-groove S/D profile for improved access resistance |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra +3 more |
2020-05-05 |
$29,615,000 |
| 10644112 |
Systems, methods and devices for isolation for subfin leakage |
Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more |
2020-05-05 |
$29,615,000 |
| 10636912 |
FINFET transistor having a tapered subfin structure |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Chandra S. Mohapatra +2 more |
2020-04-28 |
$36,717,000 |
| 10586848 |
Apparatus and methods to create an active channel having indium rich side and bottom surfaces |
Chandra S. Mohapatra, Glenn A. Glass, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more |
2020-03-10 |
$31,328,000 |
| 10580860 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more |
2020-03-03 |
$18,388,000 |
| 10580865 |
Transistor with a sub-fin dielectric region under a gate |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi +2 more |
2020-03-03 |
$18,388,000 |
| 10573750 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim |
2020-02-25 |
$18,813,000 |
