| 10854752 |
High mobility strained channels for fin-based NMOS transistors |
Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more |
2020-12-01 |
| 10847635 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more |
2020-11-24 |
| 10840366 |
Nanowire structures having wrap-around contacts |
Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2020-11-17 |
| 10790281 |
Stacked channel structures for MOSFETs |
Rishabh Mehandru, Roza Kotlyar, Patrick H. Keys |
2020-09-29 |
| 10636907 |
Deep EPI enabled by backside reveal for stress enhancement and contact |
Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow, Patrick H. Keys |
2020-04-28 |
| 10636871 |
Silicon and silicon germanium nanowire structures |
Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more |
2020-04-28 |
| 10600810 |
Backside fin recess control with multi-hsi option |
Aaron D. Lilak, Patrick Morrow, Rishabh Mehandru, Cory E. Weber |
2020-03-24 |
| 10580899 |
Nanowire structures having non-discrete source and drain regions |
Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn |
2020-03-03 |
| 10573715 |
Backside isolation for integrated circuit |
Aaron D. Lilak, Rishabh Mehandru, Harold W. Kennel, Paul B. Fischer |
2020-02-25 |
| 10529827 |
Long channel MOS transistors for low leakage applications on a short channel CMOS chip |
Rishabh Mehandru, Patrick Morrow, Paul B. Fischer, Aaron D. Lilak |
2020-01-07 |