{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Transistor devices having source/drain structure configured with high germanium content portion", "item": "https://www.patentleaderboard.com/patent/10811496"}]}
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Home › Transistor devices having source/drain structure configured with high germanium content portion

Transistor devices having source/drain structure configured with high germanium content portion

US Patent 10811496 · Granted Oct 20, 2020

Estimated economic value: $43,271,000 ⓘ

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