| 10850977 |
Group III-N MEMS structures on a group IV substrate |
Han Wui Then, Sansaptak Dasgupta, Ravi Pillarisetty, Marko Radosavljevic, Seung Hoon Sung +1 more |
2020-12-01 |
| 10847653 |
Semiconductor device having metallic source and drain regions |
Martin D. Giles, Annalisa Cappellani, Rafael Rios, Cory E. Weber, Aaron A. Budrevich |
2020-11-24 |
| 10840352 |
Nanowire transistors with embedded dielectric spacers |
Willy Rachmady, Seung Hoon Sung, Jack T. Kavalieros |
2020-11-17 |
| 10804386 |
Gate stack design for GaN e-mode transistor performance |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung |
2020-10-13 |
| 10804359 |
Geometric manipulation of 2DEG region in source/drain extension of GaN transistor |
Marko Radosavljevic, Han Wui Then, Sansaptak Dasgupta, Seung Hoon Sung |
2020-10-13 |
| 10784352 |
Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench |
Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more |
2020-09-22 |
| 10756183 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Robert S. Chau |
2020-08-25 |
| 10665708 |
Semiconductor devices with raised doped crystalline structures |
Marko Radosavljevic, Sansaptak Dasgupta, Seung Hoon Sung, Han Wui Then, Robert S. Chau |
2020-05-26 |
| 10665577 |
Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systems |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung |
2020-05-26 |
| 10644137 |
III-V finfet transistor with V-groove S/D profile for improved access resistance |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra +3 more |
2020-05-05 |
| 10622448 |
Transistors including retracted raised source/drain to reduce parasitic capacitances |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung |
2020-04-14 |
| 10593785 |
Transistors having ultra thin fin profiles and their methods of fabrication |
Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal +1 more |
2020-03-17 |
| 10580895 |
Wide band gap transistors on non-native semiconductor substrates |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2020-03-03 |
| 10574187 |
Envelope-tracking control techniques for highly-efficient RF power amplifiers |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung |
2020-02-25 |
| 10553689 |
Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung |
2020-02-04 |
| 10546927 |
Self-aligned transistor structures enabling ultra-short channel lengths |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung |
2020-01-28 |