Issued Patents 2020
Showing 25 most recent of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879134 | Techniques for monolithic co-integration of silicon and III-N semiconductor transistors | Marko Radosavljevic, Han Wui Then, Peter G. Tolchinsky | 2020-12-29 |
| 10879346 | Capacitor including multilayer dielectric stack | Han Wui Then, Marko Radosavljevic | 2020-12-29 |
| 10861942 | Tunable capacitors including III-N multi-2DEG and 3DEG structures for tunable RF filters | Han Wui Then, Marko Radosavljevic | 2020-12-08 |
| 10850977 | Group III-N MEMS structures on a group IV substrate | Han Wui Then, Sanaz K. Gardner, Ravi Pillarisetty, Marko Radosavljevic, Seung Hoon Sung +1 more | 2020-12-01 |
| 10848127 | Film bulk acoustic resonator (FBAR) RF filter having epitaxial layers | Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2020-11-24 |
| 10847624 | Methods and apparatus to form GaN-based transistors during back-end-of-the-line processing | Marko Radosavljevic, Han Wui Then | 2020-11-24 |
| 10840341 | Semiconductor devices, radio frequency devices and methods for forming semiconductor devices | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2020-11-17 |
| 10811526 | Stacked group III-nitride transistors for an RF switch and methods of fabrication | Han Wui Then, Marko Radosavljevic | 2020-10-20 |
| 10811501 | InN tunnel junction contacts for P-channel GaN | Marko Radosavljevic, Han Wui Then | 2020-10-20 |
| 10804879 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2020-10-13 |
| 10804386 | Gate stack design for GaN e-mode transistor performance | Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung | 2020-10-13 |
| 10804359 | Geometric manipulation of 2DEG region in source/drain extension of GaN transistor | Marko Radosavljevic, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung | 2020-10-13 |
| 10804214 | Group III-N material conductive shield for high frequency metal interconnects | Han Wui Then, Marko Radosavljevic | 2020-10-13 |
| 10790332 | Techniques for integrating three-dimensional islands for radio frequency (RF) circuits | Bruce A. Block, Paul B. Fischer, Nebil Tanzi, Gregory Chance, Han Wui Then +1 more | 2020-09-29 |
| 10777672 | Gallium nitride transistors for high-voltage radio frequency switches | Han Wui Then, Marko Radosavljevic | 2020-09-15 |
| 10777671 | Layered spacer formation for ultrashort channel lengths and staggered field plates | Han Wui Then, Marko Radosavljevic | 2020-09-15 |
| 10770551 | P-I-N diode and connected group III-N device and their methods of fabrication | Han Wui Then, Marko Radosavljevic | 2020-09-08 |
| 10770575 | Vertical group III-N devices and their methods of fabrication | Han Wui Then, Marko Radosavljevic, Pavel M. Agababov | 2020-09-08 |
| 10763350 | Transistor connected diodes and connected III-N devices and their methods of fabrication | Han Wui Then, Marko Radosavljevic | 2020-09-01 |
| 10763248 | Multi-layer silicon/gallium nitride semiconductor | Marko Radosavljevic, Han Wui Then, Ravi Pillarisetty, Kimin Jun, Patrick Morrow +3 more | 2020-09-01 |
| 10756183 | N-channel gallium nitride transistors | Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau | 2020-08-25 |
| 10727339 | Selectively regrown top contact for vertical semiconductor devices | Benjamin Chu-Kung, Gilbert Dewey, Van H. Le, Jack T. Kavalieros, Marko Radosavljevic +3 more | 2020-07-28 |
| 10727241 | 3D NAND structures including group III-N material channels | Prashant Majhi, Han Wui Then, Marko Radosavljevic | 2020-07-28 |
| 10720505 | Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance | Han Wui Then, Marko Radosavljevic | 2020-07-21 |
| 10707136 | Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS | Marko Radosavljevic, Valluri Rao, Han Wui Then | 2020-07-07 |