| 10850977 |
Group III-N MEMS structures on a group IV substrate |
Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Ravi Pillarisetty, Marko Radosavljevic +1 more |
2020-12-01 |
$25,476,000 |
| 10832847 |
Low stray field magnetic memory |
Brian S. Doyle, Kaan Oguz, Kevin P. O'Brien, David L. Kencke, Charles C. Kuo +2 more |
2020-11-10 |
$31,576,000 |
| 10832749 |
Perpendicular magnetic memory with symmetric fixed layers |
Charles C. Kuo, Justin S. Brockman, Juan G. Alzate Vinasco, Kaan Oguz, Kevin P. O'Brien +3 more |
2020-11-10 |
$31,576,000 |
| 10784170 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2020-09-22 |
$34,575,000 |
| 10763248 |
Multi-layer silicon/gallium nitride semiconductor |
Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Ravi Pillarisetty, Kimin Jun +3 more |
2020-09-01 |
$24,773,000 |
| 10756183 |
N-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung |
2020-08-25 |
$27,661,000 |
| 10756198 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick |
2020-08-25 |
$27,661,000 |
| 10707409 |
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer |
Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Mark L. Doczy, David L. Kencke +1 more |
2020-07-07 |
$29,601,000 |
| 10692839 |
GaN devices on engineered silicon substrates |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Peter G. Tolchinsky |
2020-06-23 |
$27,746,000 |
| 10665708 |
Semiconductor devices with raised doped crystalline structures |
Marko Radosavljevic, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Han Wui Then |
2020-05-26 |
$31,191,000 |
| 10580973 |
Spin-transfer torque memory (STTM) devices having magnetic contacts |
Brian S. Doyle, Kaan Oguz, Charles C. Kuo, Mark L. Doczy, Satyarth Suri +2 more |
2020-03-03 |
$18,388,000 |
| 10580895 |
Wide band gap transistors on non-native semiconductor substrates |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2020-03-03 |
$18,388,000 |
| 10573647 |
CMOS circuits using n-channel and p-channel gallium nitride transistors |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic |
2020-02-25 |
$18,813,000 |
| 10573717 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more |
2020-02-25 |
$18,813,000 |
| 10541305 |
Group III-N nanowire transistors |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2020-01-21 |
$31,546,000 |
