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Home › Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices

Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices

US Patent 10872660 · Granted Dec 22, 2020

Estimated economic value: $47,741,000 ⓘ

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