Issued Patents 2020
Showing 101–125 of 332 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10734499 | Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2020-08-04 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Xin Miao, Chen Zhang, Wenyu Xu | 2020-08-04 |
| 10734473 | On-chip MIM capacitor | Peng Xu | 2020-08-04 |
| 10734289 | Method for forming strained fin channel devices | Junli Wang, Lawrence A. Clevenger, Carl Radens, John H. Zhang | 2020-08-04 |
| 10734382 | Method for manufacturing a semiconductor structure including a very narrow aspect ratio trapping trench structure | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2020-08-04 |
| 10734410 | Conductive contacts in semiconductor on insulator substrate | Rama Divakaruni | 2020-08-04 |
| 10734281 | Method and structure to fabricate a nanoporous membrane | Zhenxing Bi, Shogo Mochizuki, Hao Tang | 2020-08-04 |
| 10734287 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Xin Miao, Wenyu Xu, Chen Zhang | 2020-08-04 |
| 10734477 | FinFET with reduced parasitic capacitance | Darsen D. Lu, Xin Miao, Tenko Yamashita | 2020-08-04 |
| 10727345 | Silicon germanium fin immune to epitaxy defect | Juntao Li, Xin Miao | 2020-07-28 |
| 10727352 | Long-channel fin field effect transistors | Zhenxing Bi, Peng Xu, Juntao Li | 2020-07-28 |
| 10727323 | Three-dimensional (3D) tunneling field-effect transistor (FET) | Juntao Li, Peng Xu, Heng Wu | 2020-07-28 |
| 10727315 | Nanosheet transistor | Juntao Li, Heng Wu, Peng Xu | 2020-07-28 |
| 10726719 | Piezoelectric power generation for roadways | — | 2020-07-28 |
| 10720364 | Forming vertical transistor devices with greater layout flexibility and packing density | Juntao Li, Choonghyun Lee | 2020-07-21 |
| 10720527 | Transistor having an oxide-isolated strained channel fin on a bulk substrate | Choonghyun Lee, Juntao Li, Peng Xu | 2020-07-21 |
| 10720528 | Method and structure of stacked FinFET | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2020-07-21 |
| 10720575 | Phase change memory with gradual resistance change | — | 2020-07-21 |
| 10714684 | Phase change memory with doped silicon germanium alloy-containing electrodes and air gap-containing spacer | — | 2020-07-14 |
| 10714593 | Fabrication of strained vertical p-type field effect transistors by bottom condensation | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2020-07-14 |
| 10714470 | Method and apparatus of forming high voltage varactor and vertical transistor on a substrate | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2020-07-14 |
| 10714569 | Producing strained nanosheet field effect transistors using a phase change material | Dexin Kong, Juntao Li, Zhenxing Bi | 2020-07-14 |
| 10714570 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2020-07-14 |
| 10707208 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Juntao Li, Peng Xu | 2020-07-07 |
| 10707325 | Fin field effect transistor devices with robust gate isolation | — | 2020-07-07 |