| 10515859 |
Extra gate device for nanosheet |
Bruce B. Doris, Junli Wang |
2019-12-24 |
| 10504889 |
Integrating a junction field effect transistor into a vertical field effect transistor |
Brent A. Anderson, Huiming Bu, Xuefeng Liu, Junli Wang |
2019-12-10 |
| 10418462 |
Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
Brent A. Anderson, Huiming Bu, Fee Li Lie, Junli Wang |
2019-09-17 |
| 10381346 |
Logic gate designs for 3D monolithic direct stacked VTFET |
Chen Zhang, Tenko Yamashita |
2019-08-13 |
| 10366897 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2019-07-30 |
| 10346580 |
Checking wafer-level integrated designs for rule compliance |
Larry Wissel |
2019-07-09 |
| 10347494 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2019-07-09 |
| 10340340 |
Multiple-threshold nanosheet transistors |
Ruqiang Bao, Michael A. Guillorn, Nicolas Loubet, Robert R. Robison, Reinaldo Vega +1 more |
2019-07-02 |
| 10332959 |
Bulk to silicon on insulator device |
Joshua M. Rubin, Tenko Yamashita |
2019-06-25 |
| 10326019 |
Fully-depleted CMOS transistors with U-shaped channel |
Kangguo Cheng, Robert H. Dennard, Bruce B. Doris |
2019-06-18 |
| 10319596 |
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2019-06-11 |
| 10283411 |
Stacked vertical transistor device for three-dimensional monolithic integration |
Joshua M. Rubin |
2019-05-07 |
| 10276558 |
Electrostatic discharge protection using vertical fin CMOS technology |
Brent A. Anderson, Huiming Bu, Xuefeng Liu, Junli Wang, Miaomiao Wang |
2019-04-30 |
| 10254340 |
Independently driving built-in self test circuitry over a range of operating conditions |
John Bradley Deforge, Theresa A. Newton, Kirk D. Peterson |
2019-04-09 |
| 10249743 |
Semiconductor device with low band-to-band tunneling |
Nicolas Degors |
2019-04-02 |
| 10249739 |
Nanosheet MOSFET with partial release and source/drain epitaxy |
Michael A. Guillorn, Nicolas Loubet, Robert R. Robison, Reinaldo Vega |
2019-04-02 |
| 10248755 |
Checking wafer-level integrated designs for antenna rule compliance |
Larry Wissel |
2019-04-02 |
| 10229915 |
Mirror contact capacitor |
Joshua M. Rubin, Tenko Yamashita |
2019-03-12 |
| 10224327 |
Semiconductor device with different fin pitches |
Bruce B. Doris |
2019-03-05 |
| 10211316 |
Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
Brent A. Anderson, Huiming Bu, Fee Li Lie, Junli Wang |
2019-02-19 |
| 10204839 |
Prevention of charging damage in full-depletion devices |
— |
2019-02-12 |
| 10170576 |
Stable work function for narrow-pitch devices |
Takashi Ando, Mohit Bajaj, Rajan K. Pandey, Rajesh Sathiyanarayanan |
2019-01-01 |
| 10170584 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Robert R. Robison, Reinaldo Vega, Rajasekhar Venigalla |
2019-01-01 |
| 10170463 |
Bipolar transistor compatible with vertical FET fabrication |
Brent A. Anderson, Kangguo Cheng, Tak H. Ning |
2019-01-01 |
