Issued Patents 2018
Showing 25 most recent of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163684 | Fabrication of silicon germanium-on-insulator FinFET | Hong He, Qing Liu | 2018-12-25 |
| 10147602 | Double aspect ratio trapping | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-12-04 |
| 10141428 | Fin formation in fin field effect transistors | Kangguo Cheng, Hong He, Ali Khakifirooz, Yunpeng Yin | 2018-11-27 |
| 10121853 | Structure and process to tuck fin tips self-aligned to gates | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10121852 | Structure and process to tuck fin tips self-aligned to gates | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10096673 | Nanowire with sacrificial top wire | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer, Xin Miao | 2018-10-09 |
| 10068970 | Nanowire isolation scheme to reduce parasitic capacitance | Kangguo Cheng, Junli Wang | 2018-09-04 |
| 10062714 | FinFET device having a high germanium content fin structure and method of making same | Gauri Karve, Qing Liu | 2018-08-28 |
| 10056474 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-08-21 |
| 10038075 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region | Stephane Allegret-Maret, Kangguo Cheng, Prasanna Khare, Qing Liu, Nicolas Loubet | 2018-07-31 |
| 10037885 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Michael A. Guillorn, Isaac Lauer, Xin Miao | 2018-07-31 |
| 10032680 | Strained finFET device fabrication | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-07-24 |
| 10003337 | Resonant virtual supply booster for synchronous logic circuits and other circuits with use of on-chip integrated magnetic inductor | Rajiv V. Joshi, Naigang Wang | 2018-06-19 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-06-12 |
| 9997613 | Integrated etch stop for capped gate and method for manufacturing the same | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer, Xin Miao | 2018-06-12 |
| 9985115 | Vertical transistor fabrication and devices | Brent A. Anderson, Seong-Dong Kim, Rajasekhar Venigalla | 2018-05-29 |
| 9966387 | Strain release in pFET regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-05-08 |
| 9954116 | Electrostatically enhanced fins field effect transistors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2018-04-24 |
| 9954083 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2018-04-24 |
| 9947743 | Structures and methods for long-channel devices in nanosheet technology | Terence B. Hook | 2018-04-17 |
| 9947593 | Extra gate device for nanosheet | Terence B. Hook, Junli Wang | 2018-04-17 |
| 9941411 | Vertical transistor fabrication and devices | Brent A. Anderson, Seong-Dong Kim, Rajasekhar Venigalla | 2018-04-10 |
| 9917019 | Strained FinFET device fabrication | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-03-13 |
| 9917188 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Darsen D. Lu, Ali Khakifirooz, Kern Rim | 2018-03-13 |
| 9917105 | Replacement fin process in SSOI wafer | Hong He, Ali Khakifirooz, Junli Wang | 2018-03-13 |