Issued Patents 2018
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163792 | Semiconductor device having an airgap defined at least partially by a protective structure | John Jianhong Zhu, Jeffrey Junhao Xu, Choh Fei Yeap, Stanley Seungchul Song | 2018-12-25 |
| 10141305 | Semiconductor devices employing field effect transistors (FETs) with multiple channel structures without shallow trench isolation (STI) void-induced electrical shorts | Jeffrey Junhao Xu, Haining Yang, Jun Yuan, Periannan Chidambaram | 2018-11-27 |
| 10134734 | Fin field effect transistor (FET) (FinFET) complementary metal oxide semiconductor (CMOS) circuits employing single and double diffusion breaks for increased performance | Jun Yuan, Yanxiang Liu | 2018-11-20 |
| 10079293 | Semiconductor device having a gap defined therein | Jeffrey Junhao Xu, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu, Vladimir Machkaoutsan +2 more | 2018-09-18 |
| 10056474 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2018-08-21 |
| 10018515 | Transistor temperature sensing | Yanxiang Liu, Haining Yang | 2018-07-10 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2018-06-12 |
| 9997360 | Method for mitigating layout effect in FINFET | Da Yang, Yanxiang Liu, Jun Yuan | 2018-06-12 |
| 9984029 | Variable interconnect pitch for improved performance | Stanley Seungchul Song, Xiangdong Chen, Raymond George Stephany, John Jianhong Zhu, Ohsang Kwon +2 more | 2018-05-29 |
| 9966387 | Strain release in pFET regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2018-05-08 |
| 9954083 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2018-04-24 |
| 9917188 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Ali Khakifirooz | 2018-03-13 |
| 9911663 | Preventing buried oxide gouging during planar and FinFET processing on SOI | Junli Wang | 2018-03-06 |
| 9911597 | Trench metal insulator metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more | 2018-03-06 |
| 9887209 | Standard cell architecture with M1 layer unidirectional routing | Mukul Gupta, Xiangdong Chen, Ohsang Kwon, Foua Vang, Stanley Seungchul Song | 2018-02-06 |
| 9876017 | Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells | Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap | 2018-01-23 |
| 9871121 | Semiconductor device having a gap defined therein | Jeffrey Junhao Xu, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu, Vladimir Machkaoutsan +2 more | 2018-01-16 |