| 10163792 |
Semiconductor device having an airgap defined at least partially by a protective structure |
John Jianhong Zhu, Jeffrey Junhao Xu, Stanley Seungchul Song, Kern Rim |
2018-12-25 |
| 10157992 |
Nanowire device with reduced parasitics |
Mustafa Badaroglu, Vladimir Machkaoutsan, Stanley Seungchul Song, Jeffrey Junhao Xu, Matthew Michael Nowak |
2018-12-18 |
| 10141317 |
Metal layers for a three-port bit cell |
Niladri Narayan Mojumder, Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang |
2018-11-27 |
| 10079293 |
Semiconductor device having a gap defined therein |
Jeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu +2 more |
2018-09-18 |
| 10043796 |
Vertically stacked nanowire field effect transistors |
Vladimir Machkaoutsan, Stanley Seungchul Song, Mustafa Badaroglu, John Jianhong Zhu, Junjing Bao +3 more |
2018-08-07 |
| 10037795 |
Seven-transistor static random-access memory bitcell with reduced read disturbance |
Seong-Ook Jung, Younghwi Yang, Stanley Seungchul Song, Zhongze Wang |
2018-07-31 |
| 10032678 |
Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices |
Jeffrey Junhao Xu, Stanley Seungchul Song, Da Yang, Vladimir Machkaoutsan, Mustafa Badaroglu |
2018-07-24 |
| 9984029 |
Variable interconnect pitch for improved performance |
Kern Rim, Stanley Seungchul Song, Xiangdong Chen, Raymond George Stephany, John Jianhong Zhu +2 more |
2018-05-29 |
| 9953979 |
Contact wrap around structure |
Jeffrey Junhao Xu, Stanley Seungchul Song, Vladimir Machkaoutsan, Mustafa Badaroglu, Junjing Bao +2 more |
2018-04-24 |
| 9941156 |
Systems and methods to reduce parasitic capacitance |
Shiqun Gu, Vidhya Ramachandran, Christine Hau-Riege, John Jianhong Zhu, Jeffrey Junhao Xu +2 more |
2018-04-10 |
| 9941154 |
Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device |
Stanley Seungchul Song, Zhongze Wang, John Jianhong Zhu |
2018-04-10 |
| 9922880 |
Method and apparatus of multi threshold voltage CMOS |
Jeffrey Junhao Xu |
2018-03-20 |
| 9876017 |
Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells |
Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Kern Rim |
2018-01-23 |
| 9871121 |
Semiconductor device having a gap defined therein |
Jeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu +2 more |
2018-01-16 |
| 9859210 |
Integrated circuits having reduced dimensions between components |
Stanley Seungchul Song, Da Yang |
2018-01-02 |