| 10096682 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more |
2018-10-09 |
| 10096709 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices |
Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady +4 more |
2018-10-09 |
| 10096683 |
Group III-N transistor on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2018-10-09 |
| 10096474 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2018-10-09 |
| 10074718 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee |
2018-09-11 |
| 10032911 |
Wide band gap transistor on non-native semiconductor substrate |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung +2 more |
2018-07-24 |
| 10026845 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2018-07-17 |
| 10020371 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more |
2018-07-10 |
| 9972686 |
Germanium tin channel transistors |
Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more |
2018-05-15 |
| 9947780 |
High electron mobility transistor (HEMT) and method of fabrication |
Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2018-04-17 |
| 9911835 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Uygar E. Avci, Rafael Rios +4 more |
2018-03-06 |
| 9911807 |
Strain compensation in transistors |
Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2018-03-06 |
| 9905651 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2018-02-27 |
| 9876014 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more |
2018-01-23 |
| 9871106 |
Heterogeneous pocket for tunneling field effect transistors (TFETs) |
Uygar E. Avci, Roza Kotlyar, Gilbert Dewey, Ian A. Young |
2018-01-16 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more |
2018-01-09 |