| 9530878 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more |
2016-12-27 |
$11,980,000 |
| 9502568 |
Non-planar quantum well device having interfacial layer and method of forming same |
Willy Rachmady, Ravi Pillarisetty, Van H. Le |
2016-11-22 |
$9,157,000 |
| 9490364 |
Semiconductor transistor having a stressed channel |
Anand S. Murthy, Tahir Ghani, Kaizad Mistry |
2016-11-08 |
$9,907,000 |
| 9478734 |
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same |
Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Uday Shah, Elijah V. Karpov +2 more |
2016-10-25 |
$11,658,000 |
| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2016-10-25 |
$11,658,000 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-10-04 |
$11,494,000 |
| 9455343 |
Hybrid phase field effect transistor |
Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah +1 more |
2016-09-27 |
$16,083,000 |
| 9437298 |
Self-storing and self-restoring non-volatile static random access memory |
Shigeki Tomishima, Dmitri E. Nikonov, Elijah V. Karpov, Ian A. Young |
2016-09-06 |
$9,244,000 |
| 9437706 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes |
Niloy Mukherjee, Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros |
2016-09-06 |
$9,244,000 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-07-19 |
$7,217,000 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more |
2016-07-12 |
$10,128,000 |
| 9385180 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta +1 more |
2016-07-05 |
$9,080,000 |
| 9373693 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2016-06-21 |
$13,200,000 |
| 9368583 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz |
2016-06-14 |
$9,885,000 |
| 9362369 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2016-06-07 |
$9,646,000 |
| 9356099 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more |
2016-05-31 |
$9,993,000 |
| 9343302 |
Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications |
Been-Yih Jin, Brian S. Doyle, Jack T. Kavalieros |
2016-05-17 |
$8,600,000 |
| 9337307 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2016-05-10 |
$12,181,000 |
| 9318701 |
Low voltage embedded memory having cationic-based conductive oxide element |
Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo |
2016-04-19 |
$11,756,000 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2016-02-16 |
$10,295,000 |
| 9252275 |
Non-planar gate all-around device and method of fabrication thereof |
Willy Rachmady, Ravi Pillarisetty, Van Hoa Lee, Jack T. Kavalieros, Jessica S. Kachian |
2016-02-02 |
$9,951,000 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-26 |
$9,792,000 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-19 |
$21,016,000 |
| 9231204 |
Low voltage embedded memory having conductive oxide and electrode stacks |
Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Eric R. Dickey, Michael Stephen Bowen +1 more |
2016-01-05 |
$11,513,000 |
| 9231194 |
High stability spintronic memory |
Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Elijah V. Karpov, Roksana Golizadeh Mojarad +1 more |
2016-01-05 |
$11,513,000 |
