| 9530878 |
III-N material structure for gate-recessed transistors |
Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2016-12-27 |
| 9461160 |
Non-planar III-N transistor |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-10-04 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2016-10-04 |
| 9397188 |
Group III-N nanowire transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-07-19 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
| 9373693 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more |
2016-06-21 |
| 9362369 |
Group III-N transistors on nanoscale template structures |
Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2016-06-07 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2016-05-10 |
| 9245989 |
High voltage field effect transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-26 |
| 9240410 |
Group III-N nanowire transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-19 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more |
2016-01-12 |