| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Jack T. Kavalieros, Marko Radosavljevic +5 more |
2016-10-25 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-10-04 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2016-10-04 |
| 9437706 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes |
Niloy Mukherjee, Gilbert Dewey, Jack T. Kavalieros, Robert S. Chau |
2016-09-06 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-07-19 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
| 9368583 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy |
2016-06-14 |
| 9337307 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2016-05-10 |
| 9287380 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Justin K. Brask |
2016-03-15 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-26 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-19 |