Issued Patents 2016
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2016-10-25 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-10-04 |
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2016-10-04 |
| 9437706 | Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes | Niloy Mukherjee, Gilbert Dewey, Jack T. Kavalieros, Robert S. Chau | 2016-09-06 |
| 9397188 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-07-19 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2016-07-12 |
| 9368583 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy | 2016-06-14 |
| 9337307 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2016-05-10 |
| 9287380 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Suman Datta, Justin K. Brask | 2016-03-15 |
| 9245989 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-01-26 |
| 9240410 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-01-19 |