| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2016-10-25 |
$11,658,000 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-10-04 |
$11,494,000 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Niloy Mukherjee +3 more |
2016-10-04 |
$11,494,000 |
| 9455150 |
Conformal thin film deposition of electropositive metal alloy films |
Scott B. Clendenning, Patricio E. Romero |
2016-09-27 |
$16,083,000 |
| 9443936 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more |
2016-09-13 |
$11,798,000 |
| 9437706 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes |
Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau |
2016-09-06 |
$9,244,000 |
| 9412872 |
N-type and P-type tunneling field effect transistors (TFETs) |
Roza Kotlyar, Stephen M. Cea, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2016-08-09 |
$12,367,000 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-07-19 |
$7,217,000 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Niti Goel +8 more |
2016-07-12 |
$10,128,000 |
| 9343574 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2016-05-17 |
$8,600,000 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2016-05-10 |
$12,181,000 |
| 9287380 |
Gate electrode having a capping layer |
Mark L. Doczy, Suman Datta, Justin K. Brask, Matthew V. Metz |
2016-03-15 |
$12,478,000 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2016-02-16 |
$10,295,000 |
| 9257346 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Jack T. Kavalieros |
2016-02-09 |
$15,927,000 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-26 |
$9,792,000 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2016-01-19 |
$21,016,000 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Willy Rachmady, Van H. Le +3 more |
2016-01-12 |
$15,498,000 |
