| 9530878 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Benjamin Chu-Kung +2 more |
2016-12-27 |
| 9502568 |
Non-planar quantum well device having interfacial layer and method of forming same |
Willy Rachmady, Van H. Le, Robert S. Chau |
2016-11-22 |
| 9490329 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich |
2016-11-08 |
| 9478635 |
Germanium-based quantum well devices |
Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more |
2016-10-25 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-10-04 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more |
2016-10-04 |
| 9455343 |
Hybrid phase field effect transistor |
Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah, Charles C. Kuo +1 more |
2016-09-27 |
| 9450092 |
Stress in trigate devices using complimentary gate fill materials |
Titash Rakshit, Martin D. Giles, Jack T. Kavalieros |
2016-09-20 |
| 9443936 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Marko Radosavljevic, Gilbert Dewey +2 more |
2016-09-13 |
| 9397166 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Jack T. Kavalieros, Niloy Mukherjee |
2016-07-19 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-07-19 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
| 9374509 |
Wearable imaging sensor for communications |
Sairam Agraharam, John S. Guzek, Christopher J. Jezewski |
2016-06-21 |
| 9356099 |
Techniques for forming contacts to quantum well transistors |
Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more |
2016-05-31 |
| 9343574 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee |
2016-05-17 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2016-05-10 |
| 9306068 |
Stain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Jack T. Kavalieros |
2016-04-05 |
| 9293546 |
Vertical tunneling negative differential resistance devices |
— |
2016-03-22 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2016-02-16 |
| 9257346 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros |
2016-02-09 |
| 9252275 |
Non-planar gate all-around device and method of fabrication thereof |
Willy Rachmady, Van Hoa Lee, Jack T. Kavalieros, Robert S. Chau, Jessica S. Kachian |
2016-02-02 |
| 9253884 |
Electronic fabric with incorporated chip and interconnect |
Christopher J. Jezewski, Brian S. Doyle |
2016-02-02 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-26 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-19 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more |
2016-01-12 |