| 9530878 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2016-12-27 |
| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2016-10-25 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-10-04 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2016-10-04 |
| 9437706 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau |
2016-09-06 |
| 9430390 |
Core in-memory space and object management architecture in a traditional RDBMS supporting DW and OLTP applications |
Amit Ganesh, Vineet Marwah, Jesse Kamp |
2016-08-30 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-07-19 |
| 9397166 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2016-07-19 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
| 9378232 |
Framework for numa affinitized parallel query on in-memory objects within the RDBMS |
Amit Ganesh, Vineet Marwah |
2016-06-28 |
| 9356099 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more |
2016-05-31 |
| 9343574 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung |
2016-05-17 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2016-05-10 |
| 9292564 |
Mirroring, in memory, data from disk to improve query performance |
Jesse Kamp, Amit Ganesh, Vineet Marwah, Vivekanandhan Raja, Tirthankar Lahiri +6 more |
2016-03-22 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2016-02-16 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-26 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-19 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2016-01-12 |
