| 9530878 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2016-12-27 |
$11,980,000 |
| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more |
2016-10-25 |
$11,658,000 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-10-04 |
$11,494,000 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more |
2016-10-04 |
$11,494,000 |
| 9443936 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Gilbert Dewey +2 more |
2016-09-13 |
$11,798,000 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-07-19 |
$7,217,000 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
$10,128,000 |
| 9373693 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more |
2016-06-21 |
$13,200,000 |
| 9362369 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2016-06-07 |
$9,646,000 |
| 9356099 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Jack T. Kavalieros, Willy Rachmady +2 more |
2016-05-31 |
$9,993,000 |
| 9343574 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2016-05-17 |
$8,600,000 |
| 9337307 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2016-05-10 |
$12,181,000 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2016-05-10 |
$12,181,000 |
| 9310565 |
Cloaking system with waveguides |
Ian A. Young, Johanna M. Swan, Robert L. Sankman |
2016-04-12 |
$10,096,000 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2016-02-16 |
$10,295,000 |
| 9257346 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros |
2016-02-09 |
$15,927,000 |
| 9258114 |
Quantum key distribution (QSD) scheme using photonic integrated circuit (PIC) |
Christopher J. Jezewski, Kelin J. Kuhn |
2016-02-09 |
$15,927,000 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-26 |
$9,792,000 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2016-01-19 |
$21,016,000 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2016-01-12 |
$15,498,000 |
