| 9530878 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more |
2016-12-27 |
$11,980,000 |
| 9478635 |
Germanium-based quantum well devices |
Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Marko Radosavljevic +5 more |
2016-10-25 |
$11,658,000 |
| 9461160 |
Non-planar III-N transistor |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2016-10-04 |
$11,494,000 |
| 9450092 |
Stress in trigate devices using complimentary gate fill materials |
Titash Rakshit, Martin D. Giles, Ravi Pillarisetty |
2016-09-20 |
$10,814,000 |
| 9443936 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains |
Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more |
2016-09-13 |
$11,798,000 |
| 9437706 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes |
Niloy Mukherjee, Gilbert Dewey, Matthew V. Metz, Robert S. Chau |
2016-09-06 |
$9,244,000 |
| 9425256 |
Strain inducing semiconductor regions |
Suman Datta, Been-Yih Jin |
2016-08-23 |
$16,730,000 |
| 9419140 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2016-08-16 |
$10,311,000 |
| 9397166 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Niloy Mukherjee |
2016-07-19 |
$7,217,000 |
| 9397188 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2016-07-19 |
$7,217,000 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
$10,128,000 |
| 9385180 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more |
2016-07-05 |
$9,080,000 |
| 9368583 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz |
2016-06-14 |
$9,885,000 |
| 9356099 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady +2 more |
2016-05-31 |
$9,993,000 |
| 9343302 |
Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications |
Been-Yih Jin, Brian S. Doyle, Robert S. Chau |
2016-05-17 |
$8,600,000 |
| 9337307 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2016-05-10 |
$12,181,000 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2016-05-10 |
$12,181,000 |
| 9306068 |
Stain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty |
2016-04-05 |
$11,088,000 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2016-02-16 |
$10,295,000 |
| 9257346 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey |
2016-02-09 |
$15,927,000 |
| 9252275 |
Non-planar gate all-around device and method of fabrication thereof |
Willy Rachmady, Ravi Pillarisetty, Van Hoa Lee, Robert S. Chau, Jessica S. Kachian |
2016-02-02 |
$9,951,000 |
| 9245989 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2016-01-26 |
$9,792,000 |
| 9240410 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2016-01-19 |
$21,016,000 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2016-01-12 |
$15,498,000 |
