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III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2016-12-27 |
| 9496486 |
Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same |
Brian S. Doyle, David L. Kencke, Charles C. Kuo, Kaan Oguz, Mark L. Doczy +2 more |
2016-11-15 |
| 9478734 |
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same |
Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Elijah V. Karpov, Roksana Golizadeh Mojarad +2 more |
2016-10-25 |
| 9455343 |
Hybrid phase field effect transistor |
Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Charles C. Kuo +1 more |
2016-09-27 |
| 9437808 |
Electric field enhanced spin transfer torque memory (STTM) device |
Brian S. Doyle, Charles C. Kuo, David L. Kencke, Roksana Golizadeh Mojarad |
2016-09-06 |
| 9385180 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Suman Datta, Amlan Majumdar +1 more |
2016-07-05 |
| 9306063 |
Vertical transistor devices for embedded memory and logic technologies |
Brian S. Doyle, Roza Kotlyar, Charles C. Kuo |
2016-04-05 |
| 9293560 |
Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
Brian S. Doyle, Roza Kotlyar, Charles C. Kuo |
2016-03-22 |
| 9263557 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2016-02-16 |